Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

摘要

Silicon pixel modules employing n-in-p planar sensors with an activethickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slimedge sensor devices, produced at VTT in Finland have been interconnected toATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for highenergy physics collider experiments to ensure radiation hardness at highfluences. Moreover, the active edge technology of the VTT production maximizesthe sensitive region of the assembly, allowing for a reduced overlap of themodules in the pixel layer close to the beam pipe. The CiS production includesalso four chip sensors according to the module geometry planned for the outerlayers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. Themodules have been characterized using radioactive sources in the laboratory andwith high precision measurements at beam tests to investigate the hitefficiency and charge collection properties at different bias voltages andparticle incidence angles. The performance of the different sensor thicknessesand edge designs are compared before and after irradiation up to a fluence of$1.4\times10^{16}n_{eq}/cm^{2}$.